Origin of Bulk Uniaxial Anisotropy in Zinc-Blende Dilute Magnetic Semiconductors
نویسندگان
چکیده
منابع مشابه
Optical anisotropy of zinc-blende semiconductors in an electric field
A theory of optical anisotropy for zinc-blende semiconductors in an electric field is derived by extending the formalism of Luttinger and Kohn [Phys. Rev. 97, 869 (1955)] to higher order. This resolves a recent controversy over the correct form of the Hamiltonian for the degenerate valence bands.
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Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism,...
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We show that the piezoelectric effect that describes the emergence of an electric field in response to a crystal deformation in III-V semiconductors such as GaAs and InAs has strong contributions from second-order effects that have been neglected so far. We calculate the second-order piezoelectric tensors using density-functional theory and obtain the piezoelectric field for [111]-oriented In(x...
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This paper begins with a brief introduction to the field of spintronics and dilute magnetic semiconductor (DMS), the second part discusses in detail on three typical DMS materials–(Ga,Mn)As, (Ga,Mn)N and Transition metal doped oxide. Next mechanism of DMS ferromagnetism along with its magneto transport properties are discussed. Following that, an important sample preparation technique in DMS– M...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2012
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.108.237203